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Compositional engineering has been used to overcome difficulties in fabricating high-quality phase-pure formamidinium perovskite films together with its ambient instability. However, this comes alongside an undesirable increase in bandgap that sacrifices the device photocurrent. Here we report the fabrication of phase-pure formamidinium-lead tri-iodide perovskite films with excellent optoelectronic quality and stability. Incorporation of 1.67 mol% of 2D phenylethylammonium lead iodide into the precursor solution enables the formation of phase-pure formamidinium perovskite with an order of magnitude enhanced photoluminescence lifetime. The 2D perovskite spontaneously forms at grain boundaries to protect the formamidinium perovskite from moisture and suppress ion migration. A stabilized power conversion efficiency (PCE) of 20.64% (certified stabilized PCE of 19.77%) is achieved with a short-circuit current density exceeding 24 mA cm⁻²and an open-circuit voltage of 1.130 V, corresponding to a loss-in-potential of 0.35 V, and significantly enhanced operational stability.

Metal halide perovskites have been in the limelight in recent years due to their enormous potential for use in optoelectronic devices, owing to their unique combination of properties, such as high absorption coefficient, long charge‐carrier diffusion lengths, and high defect tolerance. Perovskite‐based solar cells and light‐emitting diodes (LEDs) have achieved remarkable breakthroughs in a comparatively short amount of time. As of writing, a certified power conversion efficiency of 22.7% and an external quantum efficiency of over 10% have been achieved for perovskite solar cells and LEDs, respectively. Interfaces and defects have a critical influence on the properties and operational stability of metal halide perovskite optoelectronic devices. Therefore, interface and defect engineering are crucial to control the behavior of the charge carriers and to grow high quality, defect‐free perovskite crystals. Herein, a comprehensive review of various strategies that attempt to modify the interfacial characteristics, control the crystal growth, and understand the defect physics in metal halide perovskites, for both solar cell and LED applications, is presented. Lastly, based on the latest advances and breakthroughs, perspectives and possible directions forward in a bid to transcend what has already been achieved in this vast field of metal halide perovskite optoelectronic devices are discussed.

Although metal halide perovskite (MHP) light‐emitting diodes (LEDs) have demonstrated great potential in terms of electroluminescence efficiency, the operational stability of MHP LEDs currently remains the biggest bottleneck toward their practical usage. Well‐confined excitons/charge carriers in a dielectric/quantum well based on conventional spatial or potential confinement approaches substantially enhance radiative recombination in MHPs, but an increased surface‐to‐volume ratio and multiphase interfaces likely result in a high degree of surface or interface defect states, which brings about a critical environmentally/operationally vulnerable point on LED stability. Here, an effective solution is suggested to mitigate such drawbacks using strategically designed surface‐2D/bulk‐3D heterophased MHP nanograins for long‐term‐stable LEDs. The 2D surface‐functionalized MHP renders significantly reduced trap density, environmental stability, and an ion‐migration‐immune surface in addition to a fast radiative recombination owing to its spatially and potentially confined charge carriers, simultaneously. As a result, heterophased MHP LEDs show substantial improvement in operational lifetime (T₅₀: >200 h) compared to conventional pure 3D or quasi‐2D counterparts (T₅₀: < 0.2 h) as well as electroluminescence efficiency (surface‐2D/bulk‐3D: ≈7.70 ph per el% and pure 3D: ≈0.46 ph per el%).

Halide perovskite colloidal quantum dots (CQDs) have recently emerged as a promising candidate for CQD photovoltaics due to their superior optoelectronic properties to conventional chalcogenides CQDs. However, the low charge separation efficiency due to quantum confinement still remains a critical obstacle toward higher‐performance perovskite CQD photovoltaics. Available strategies employed in the conventional CQD devices to enhance the carrier separation, such as the design of type‐Ⅱ core–shell structure and versatile surface modification to tune the electronic properties, are still not applicable to the perovskite CQD system owing to the difficulty in modulating surface ligands and structural integrity. Herein, a facile strategy that takes advantage of conjugated small molecules that provide an additional driving force for effective charge separation in perovskite CQD solar cells is developed. The resulting perovskite CQD solar cell shows a power conversion efficiency approaching 13% with an open‐circuit voltage of 1.10 V, short‐circuit current density of 15.4 mA cm⁻², and fill factor of 74.8%, demonstrating the strong potential of this strategy toward achieving high‐performance perovskite CQD solar cells.

Intrinsically, detrimental defects accumulating at the surface and grain boundaries limit both the performance and stability of perovskite solar cells. Small molecules and bulkier polymers with functional groups are utilized to passivate these ionic defects but usually suffer from volatility and precipitation issues, respectively. Here, starting from the addition of small monomers in the PbI₂precursor, a polymerization‐assisted grain growth strategy is introduced in the sequential deposition method. With a polymerization process triggered during the PbI₂film annealing, the bulkier polymers formed will be adhered to the grain boundaries, retaining the previously established interactions with PbI₂. After perovskite formation, the polymers anchored on the boundaries can effectively passivate undercoordinated lead ions and reduce the defect density. As a result, a champion power conversion efficiency (PCE) of 23.0% is obtained, together with a prolonged lifetime where 85.7% and 91.8% of the initial PCE remain after 504 h continuous illumination and 2208 h shelf storage, respectively.